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2sk3461(l), 2sk3461(s) silicon n channel mos fet high speed power switching ade-208-944 (z) 1st. edition mar. 2001 features low on-resistance r ds(on) = 4.3 m typ. 4 v gate drive device high speed switching outline 1. gate 2. drain 3. source 4. drain 1 2 3 4 1 2 3 4 ldpak g d s
2sk3461(l), 2sk3461(s) 2 absolute maximum ratings (ta = 25?) item symbol value unit drain to source voltage v dss 60 v gate to source voltage v gss 20 v drain current i d 85 a drain peak current i d (pulse) note 1 340 a body-drain diode reverse drain current i dr 85 a avalanche current i ap note 3 60 a avalanche energy e ar note 3 308 mj channel dissipation pch note 2 110 w channel temperature tch 150 c storage temperature tstg ?5 to +150 c notes: 1. pw 10 m s, duty cycle 1% 2. value at tc = 25 c 3. value at tch = 25 c: rg 3 50 w
2sk3461(l), 2sk3461(s) 3 electrical characteristics (ta = 25?) item symbol min typ max unit test conditions drain to source breakdown voltage v (br)dss 60v i d = 10 ma, v gs = 0 gate to source leak current i dss 10 m av ds = 60 v, v gs = 0 zero gate voltage drain current i gss 0.1 m av gs = 20 v, v ds = 0 gate to source cutoff voltage v gs(off) 1.0 2.5 v v ds = 10 v, i d = 1 ma note 1 forward transfer admittance |y fs |5590 s i d = 45 a, v ds = 10 v note 1 static drain to source on state r ds(on) 4.3 5.5 m w i d = 45 a, v gs = 10 v note 1 resistance r ds(on) 6.0 9.0 m w i d = 45 a, v gs = 4 v note 1 input capacitance ciss 9770 pf v ds = 10 v output capacitance coss 1340 pf v gs = 0 reverse transfer capacitance crss 470 pf f = 1 mhz total gate charge qg 180 nc v dd = 50 v gate to source charge qgs 32 nc v gs = 10 v gate to drain charge qgd 36 nc i d = 85 a turn-on delay time td(on) 53 ns v gs = 10 v rise time tr 320 ns i d = 45 a turn-off delay time td(off) 700 ns r l = 0.67 w fall time tf 380 ns body-drain diode forward voltage v df 1.0 v i f = 85 a, v gs = 0 body-drain diode reverse recovery time trr 70 ns i f = 85 a, v gs = 0 dif/dt = 50 a/ m s note: 1. pulse test
2sk3461(l), 2sk3461(s) 4 main characteristics 160 120 80 0 50 100 150 200 0.1 0.3 1 3 10 30 100 100 80 60 40 20 0 2 46810 1000 300 100 30 10 1 0.3 0.1 3 ta = 25 c 10 s 100 s 1 ms dc operation (tc = 25 c) pw = 10 ms (1 shot) 3 v 40 5 v 4 v 2.5 v 100 80 60 40 20 0 12345 tc = ?5 c 25 c 75 c v = 10 v gs channel dissipation pch (w) case temperature tc ( c) power vs. temperature derating drain to source voltage v ds (v) drain current i d (a) maximum safe operation area operation in this area is limited by r ds(on) gate to source voltage v gs (v) drain current i d (a) typical transfer characteristics v = 10 v ds pulse test drain to source voltage v ds (v) drain current i d (a) typical output characteristics pulse test
2sk3461(l), 2sk3461(s) 5 0 48 12 16 20 0.5 0.4 0.3 0.2 0.1 i = 50 a d 20 a 10 a 1 30 100 3 100 0.3 1 0.1 10 1000 10 3 30 300 v = 4 v gs 10 v 0.1 0.3 1 3 10 30 100 500 100 200 20 50 10 2 5 1 0.5 tc = ?5 c 75 c 25 c 20 16 12 8 4 ?0 0 50 100 150 200 0 v = 10 v gs 4 v 10, 20, 50 a i = 50 a d 10, 20 a gate to source voltage v gs (v) drain to source saturation voltage vs. gate to source voltage drain to source saturation voltage v ds(on) (v) pulse test drain to source on state resistance r ds(on) (m ) static drain to source on state resistance vs. drain current pulse test drain current i d (a) drain current i d (a) forward transfer admittance vs. drain current forward transfer admittance |yfs| (s) ds v = 10 v pulse test case temperature tc ( c) static drain to source on state resistance r ds(on) (m ) static drain to source on state resistance vs. temperature pulse test
2sk3461(l), 2sk3461(s) 6 0.1 0.3 1 3 10 30 100 01020304050 1000 10000 3000 100 80 60 40 20 0 20 16 12 8 4 80 160 240 320 400 0 1000 100 200 20 10 0.1 0.2 2 10 100 1000 500 100 200 20 50 10 di / dt = 50 a / s v = 0, ta = 25 c gs 300 20 1 100 v = 0 f = 1 mhz gs ciss coss crss i = 85 a d v gs v ds v = 50 v 25 v 10 v ds 0.5 5 v = 50 v 25 v 10 v ds 500 50 50 v = 10 v, v = 30 v pw = 5 s, duty < 1 % gs dd r t d(on) t d(off) t t f 30000 reverse drain current i dr (a) reverse recovery time trr (ns) body-drain diode reverse recovery time typical capacitance vs. drain to source voltage capacitance c (pf) drain to source voltage v ds (v) switching time t (ns) drain current i d (a) switching characteristics gate charge qg (nc) collector to emitter voltage v ds (v) gate to emitter voltage v gs (v) dynamic input characteristics
2sk3461(l), 2sk3461(s) 7 0 0.4 0.8 1.2 1.6 2.0 v = 0, ? v gs 10 v 5 v 100 80 60 40 20 d. u. t rg i monitor ap v monitor ds v dd 50 vin 15 v 0 i d v ds i ap v (br)dss l v dd e = ?l ?i 2 1 v v ?v ar ap dss dss dd 2 400 320 240 160 80 25 50 75 100 125 150 0 i = 60 a v = 15 v duty < 0.1 % rg > 50 ap dd source to drain voltage v sdf (v) reverse drain current i f (a) reverse drain current vs. source to drain voltage pulse test channel temperature tch ( c) repetitive avalanche energy e ar (mj) maximum avalanche energy vs. channel temperature derating avalanche test circuit avalanche waveform
2sk3461(l), 2sk3461(s) 8 vin monitor d.u.t. vin 10 v r l v = 30 v dd tr td(on) vin 90% 90% 10% 10% vout td(off) vout monitor 50 90% 10% t f 3 1 0.3 0.1 0.03 0.01 10 100 1 m 10 m 100 m 1 10 dm p pw t d = pw t ch ?c(t) = s (t) ? ch ?c ch ?c = 1.14 c/w, tc = 25 c q g q q tc = 25 c d = 1 0.5 0.2 0.1 0.05 0.02 0.01 1shot pulse pulse width pw (s) normalized transient thermal impedance g s (t) normalized transient thermal impedance vs. pulse width switching time test circuit waveform
2sk3461(l), 2sk3461(s) 9 package dimensions hitachi code jedec eiaj mass (reference value) ldpak (l) 1.4 g 10.2 0.3 0.86 0.76 0.1 2.54 0.5 2.54 0.5 + 0.2 ?0.1 1.2 0.2 4.44 0.2 1.3 0.15 2.59 0.2 0.4 0.1 11.0 0.5 8.6 0.3 10.0 11.3 0.5 + 0.3 ?0.5 (1.4) 1.27 0.2 as of january, 2001 unit: mm
2sk3461(l), 2sk3461(s) 10 hitachi code jedec eiaj mass (reference value) ldpak (s)-(1) 1.3 g 10.2 0.3 1.27 0.2 (1.5) (1.4) 8.6 0.3 10.0 + 0.3 ?0.5 4.44 0.2 1.3 0.15 0.1 + 0.2 ?0.1 0.4 0.1 0.86 + 0.2 ?0.1 2.54 0.5 2.54 0.5 1.2 0.2 3.0 + 0.3 ?0.5 (1.5) 7.8 6.6 2.2 1.7 7.8 7.0 as of january, 2001 unit: mm
2sk3461(l), 2sk3461(s) 11 hitachi code jedec eiaj mass (reference value) ldpak (s)-(2) 1.35 g 10.2 0.3 1.27 0.2 (1.5) (1.4) 8.6 0.3 10.0 + 0.3 ?0.5 4.44 0.2 1.3 0.2 0.1 + 0.2 ?0.1 0.4 0.1 0.86 + 0.2 ?0.1 2.54 0.5 2.54 0.5 1.2 0.2 5.0 + 0.3 ?0.5 (1.5) 7.8 6.6 2.2 1.7 7.8 7.0 as of january, 2001 unit: mm
2sk3461(l), 2sk3461(s) 12 cautions 1. hitachi neither warrants nor grants licenses of any rights of hitachi? or any third party? patent, copyright, trademark, or other intellectual property rights for information contained in this document. hitachi bears no responsibility for problems that may arise with third party? rights, including intellectual property rights, in connection with use of the information contained in this document. 2. products and product specifications may be subject to change without notice. confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. hitachi makes every attempt to ensure that its products are of high quality and reliability. however, contact hitachi? sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. design your application so that the product is used within the ranges guaranteed by hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as fail- safes, so that the equipment incorporating hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the hitachi product. 5. this product is not designed to be radiation resistant. 6. no one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from hitachi. 7. contact hitachi? sales office for any questions regarding this document or hitachi semiconductor products. hitachi, ltd. semiconductor & integrated circuits. nippon bldg., 2-6-2, ohte-machi, chiyoda-ku, tokyo 100-0004, japan tel: tokyo (03) 3270-2111 fax: (03) 3270-5109 copyright ? hitachi, ltd., 2000. all rights reserved. printed in japan. hitachi asia ltd. hitachi tower 16 collyer quay #20-00, singapore 049318 tel : <65>-538-6533/538-8577 fax : <65>-538-6933/538-3877 url : http://www.hitachi.com.sg url northamerica : http://semiconductor.hitachi.com/ europe : http://www.hitachi-eu.com/hel/ecg asia : http://sicapac.hitachi-asia.com japan : http://www.hitachi.co.jp/sicd/indx.htm hitachi asia ltd. (taipei branch office) 4/f, no. 167, tun hwa north road, hung-kuo building, taipei (105), taiwan tel : <886>-(2)-2718-3666 fax : <886>-(2)-2718-8180 telex : 23222 has-tp url : http://www.hitachi.com.tw hitachi asia (hong kong) ltd. group iii (electronic components) 7/f., north tower, world finance centre, harbour city, canton road tsim sha tsui, kowloon, hong kong tel : <852>-(2)-735-9218 fax : <852>-(2)-730-0281 url : http://www.hitachi.com.hk hitachi europe ltd. electronic components group. whitebrook park lower cookham road maidenhead berkshire sl6 8ya, united kingdom tel: <44> (1628) 585000 fax: <44> (1628) 585160 hitachi europe gmbh electronic components group dornacher stra b e 3 d-85622 feldkirchen, munich germany tel: <49> (89) 9 9180-0 fax: <49> (89) 9 29 30 00 hitachi semiconductor (america) inc. 179 east tasman drive, san jose,ca 95134 tel: <1> (408) 433-1990 fax: <1>(408) 433-0223 for further information write to: colophon 2.0

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